(
HIGH-Numerical
Aperture
EUV) A chip lithography method that captures light from wider angles and converges it into a sharper point. High-NA EUV has a wider .55 numerical aperture compared to .33 for standard EUV, and it supports feature sizes down to roughly 8 nm, which is a true measurement. See
EUV light.
Intel Was the First
Intel is the first to use the ASML TWINSCAN EXE:5200B lithography system which uses High-NA EUV. Installed in Intel's Oregon facility in late 2025, TWINSCAN is expected in its upcoming 14A chip process. See
Intel 14A.
Remember...
the 8 nm is the true physical feature size, but 14A (14 angstroms) is less than 1 nm and is strictly branding. See
chip feature size.